Method for depositing films using gas cluster ion beam processing
US7794798B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 29, 2007 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Sep 4, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0812
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for depositing material on a substrate is described. The method comprises maintaining a reduced-pressure environment around a substrate holder for holding a substrate having a surface, and holding the substrate securely within the reduced-pressure environment. Additionally, the method comprises providing to the reduced-pressure environment a gas cluster ion beam (GCIB) from a pressurized gas mixture, accelerating the GCIB, and irradiating the accelerated GCIB onto at least a portion of the surface of the substrate to form a thin film. In one embodiment, the pressurized gas mixture comprises a silicon-containing specie and at least one of a nitrogen-containing specie or a carbon-containing specie for forming a thin film containing silicon and at least one of nitrogen or carbon. In another embodiment, the gas mixture comprises a metal-containing specie for forming a thin metal-containing film. In yet another embodiment, the pressurized gas mixture comprises a fluorocarbon-containing specie for forming a thin fluorocarbon-containing film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.