Method of forming a pressure switch thin film device
US7795062B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2007 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Mar 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/50
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
This invention provides a method of forming at least one pressure switch thin film device. The method includes providing a substrate and depositing a plurality of thin film device layers as a stack upon the substrate. An imprinted 3D template structure is provided upon the plurality of thin film device layers. The plurality of thin film device layers and the 3D template structure are then etched and at least one thin film device layer is undercut to provide a plurality of aligned electrical contact pairs and adjacent spacer posts. A flexible membrane providing a plurality of separate electrical contacts is deposited upon the spacer posts, the separate electrical contacts overlapping the contact pairs. The spacer posts provide a gap between the electrical contacts and the contact pairs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.