Semiconductor device including an amorphous nitrided silicon adhesion layer and method of manufacture therefor
US7795070B2 · kind B2 · utility
1Cited by
1References
6Claims
0Family size
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Key dates
| Filing date | Mar 30, 2007 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Mar 30, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76829
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device, without limitation, includes forming a first semiconductor layer over a substrate, and forming a second semiconductor layer over the first semiconductor layer, wherein an amorphous nitrided silicon adhesion layer is located between and adheres the first and second semiconductor layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.