Method of manufacturing semiconductor device using salicide process
US7795086B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Dec 30, 2008 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Dec 30, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0133
Abstract
A method for manufacturing a semiconductor device using a salicide process, which includes forming a gate dielectric layer over a silicon substrate including a PMOS region and an NMOS region; forming a first silicon pattern in the NMOS region and a second silicon pattern in the PMOS region; forming a first metal layer that is in contact with the first silicon pattern and the exposed first portion of the silicon substrate; and forming a first gate, a first junction, a second gate, and a second junction by performing a heat treatment to silicify the respective first and second silicon patterns and the silicon substrate.
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