Ultra-violet protected tamper resistant embedded EEPROM

US7795087B2 · kind B2 · utility

Assignee

• TOWER PARTNERS SEMICONDUCTOR CO., LTD. · IL

Inventors

• Yakov Roizin · Afula, IL
• Yossi Netzer · Hadera, IL
• Ira Naot · Jerusalem, IL
• Myriam Buchbinder · Migdal HaEmek, IL
• Avi Ben-Guigui · Migdal HaEmek, IL

Key dates

• Filing date: Sep 10, 2008
• Grant date: Sep 14, 2010
• Expiry date: Sep 10, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A pre-metal dielectric structure of a single-poly EEPROM structure includes a UV light-absorbing film, which prevents the charge on a floating gate of the EEPROM structure from being changed in response to UV radiation. In one embodiment, the pre-metal dielectric structure includes a first pre-metal dielectric layer, an amorphous silicon layer located over the first pre-metal dielectric layer, and a second pre-metal dielectric layer located over the amorphous silicon layer.