Active area bonding compatible high current structures
US7795130B2 · kind B2 · utility
3Cited by
10References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2007 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Apr 20, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor structure is provided. One method comprises forming a device region between a substrate and a bond pad. Patterning a conductor between the bond pad and the device region with gaps. Filling the gaps with insulation material that is harder than the conductor to form pillars of relatively hard material that extend through the conductor and forming an insulation layer of the insulation material between the conductor and the bond pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.