Method of fabricating metal interconnects and inter-metal dielectric layer thereof
US7795131B2 · kind B2 · utility
2Cited by
4References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 12, 2007 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Jan 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76885
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating metal interconnects and an inter-metal dielectric layer thereof. A first metal interconnect pattern and a second metal interconnect pattern disposed thereon are formed on a substrate by plating processes. Subsequently, an inter-metal dielectric layer is formed on the substrate, the first metal interconnect pattern and the second metal interconnect pattern. The inter-metal dielectric layer is then planarized and the second metal interconnect pattern is exposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.