Self-aligned cross-point memory fabrication

US7795132B2 · kind B2 · utility

Assignee

• Molecular Imprints, Inc. · US

Inventors

• Sidlgata V. Sreenivasan · Austin, US
• Christopher Mark Melliar-Smith · Morris, US
• Dwayne L. LaBrake · Austin, US

Key dates

• Filing date: Jul 30, 2008
• Grant date: Sep 14, 2010
• Expiry date: Jul 30, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B63/10

Abstract

Fabricating a cross-point memory structure using two lithography steps with a top conductor and connector or memory element and a bottom conductor orthogonal to the top connector. A first lithography step followed by a series of depositions and etching steps patterns a first channel having a bottom conductor. A second lithography step followed by a series of depositions and etching steps patterns a second channel orthogonal to the first channel and having a memory element connecting the an upper conductor and the lower conductor at their overlaid intersections.