Patent · US Active

Surface contamination analyzer for semiconductor wafers

US7795593B2 · kind B2 · utility

0Cited by

39References

18Claims

0Family size

Assignee

TOPCON CORPORATION · JP

Inventors

Takeo Ushiki · Sendai, JP
Keizo Yamada · Tokyo, JP
Yohsuke Itagaki · Tokyo, JP
Tohru Tsujide · Tokyo, JP

Key dates

Filing date	Oct 9, 2008
Grant date	Sep 14, 2010
Priority date	—
Expiry date	Oct 9, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/24592
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A semiconductor wafer is radiated with an electron beam so that the inelastic scattering takes place in the narrow region, and current flows out from the narrow region; the amount of current is dependent on the substance or substances in the narrow region so that the analyst evaluates the degree of contamination on the basis of the substance or substances specified in the narrow region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.