Semiconductor device with a U-shape drift region

US7795638B2 · kind B2 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventor

• Xingbi Chen · Chengdu, CN

Key dates

• Filing date: Aug 25, 2008
• Grant date: Sep 14, 2010
• Expiry date: Aug 25, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/126

Abstract

A cell of a semiconductor device comprises a substrate of n-type with a trench formed in a portion of a first main surface of the substrate and filled with insulator. Two device-feature regions are formed beneath the first main surface of the substrate, the first one at one side and the second one at the other side of the trench. A region of a p-type and/or a region of metal is formed in the first device feature region and is connected to a first electrode. A p-n junction is formed in the second device feature region and the p-region of the p-n junction is connected to a second electrode. A U-shaped region is formed between the two device regions. An IGBT without tail during turning-off can be fabricated with a simple process at a low cost.