Acceptor doped barium titanate based thin film capacitors on metal foils and methods of making thereof
US7795663B2 · kind B2 · utility
5Cited by
23References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2005 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Jun 21, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a dielectric thin film composition comprising: (1) one or more barium/titanium-containing additives selected from (a) barium titanate, (b) any composition that can form barium titanate during firing, and (c) mixtures thereof; dissolved in (2) organic medium; and wherein said thin film composition is doped with 0.002-0.05 atom percent of a dopant comprising an element selected from Sc, Cr, Fe, Co, Ni, Ca, Zn, Al, Ga, Y, Nd, Sm, Eu, Gd, Dy, Ho, Er, Yb, Lu and mixtures thereof and to capacitors comprising such compositions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.