Contact structure for FinFET device

US7795669B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Georg Georgakos · Fraunberg, DE
• Bernhard Dobler · Erding, DE

Key dates

• Filing date: May 30, 2007
• Grant date: Sep 14, 2010
• Expiry date: Sep 20, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6219

Abstract

In accordance with an embodiment, a FinFET device includes: one or more fins, a dummy fin, a gate line, a gate contact landing pad, and a gate contact element. Each of the fins extends in a first direction above a substrate. The dummy fin extends in parallel with the fins in the first direction above the substrate. The gate line extends in a second direction above the substrate, and partially wraps around the fins. The gate contact landing pad is positioned adjacent to or above the dummy fin and electrically coupled to the gate line. The gate contact element is electrically coupled to the gate contact landing pad and is positioned to the top surface thereof.