Semiconductor device including a germanium silicide film on a selective epitaxial layer
US7795689B2 · kind B2 · utility
13Cited by
2References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 23, 2007 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Nov 24, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for manufacturing a semiconductor device includes: forming first contact holes in a dielectric film for a PMOS transistor; depositing germanium on the source/drain regions of the PMOS transistor exposed from the first contact holes; heat treating the germanium with silicon in the source/drain regions of the PMOS transistor to form a germanium silicide film; forming second contact holes in the dielectric film for the source/drain regions of the NMOS transistor; and forming contact plugs in the first and second contact holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.