Keizo Kawakita
50Patents
11h-index
73Co-inventors
81Inventor score
Filing activity: Nov 16, 1994 → Sep 26, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6372554B1 | Semiconductor integrated circuit device and method for production of the same | Electricity | 77 | Expired |
| US6028360A | Semiconductor integrated circuit device in which a conductive film is formed over a trap film which in turn is formed over a titanium film | Electricity | 68 | Expired |
| US6483136B1 | Semiconductor integrated circuit and method of fabricating the same | Electricity | 59 | Expired |
| US6258649A | Semiconductor integrated circuit device and method of manufacturing the same | Electricity | 56 | Expired |
| US5804479A | Method for forming semiconductor integrated circuit device having a capacitor | Electricity | 46 | Expired |
| US6215144A | Semiconductor integrated circuit device, and method of manufacturing the same | Electricity | 41 | Expired |
| US6649956B2 | Semiconductor integrated circuit device and manufacturing method thereof | Electricity | 32 | Expired |
| US7042038B2 | Semiconductor integrated circuit device and manufacturing method thereof | Electricity | 28 | Expired |
| US5578849A | Semiconductor integrated circuit device including a memory device having memory cells with increased information storage capacitance | Electricity | 25 | Expired |
| US6399438B2 | Method of manufacturing semiconductor integrated circuit device having a capacitor | Electricity | 17 | Expired |
| US7795689B2 | Semiconductor device including a germanium silicide film on a selective epitaxial layer | Electricity | 13 | Active |
| US6060352A | Method of manufacturing semiconductor device with increased focus margin | Electricity | 9 | Expired |
| US5933724A | Method of manufacturing a semiconductor integrated circuit device using a photomask in which transmitted light beam intensities are controlled | Electricity | 7 | Expired |
| US6605530B2 | Method for fabricating semiconductor integrated circuit | Electricity | 7 | Expired |
| US5933726A | Method of forming a semiconductor device have a screen stacked cell capacitor | Electricity | 7 | Expired |
| US6853081B2 | Method for fabricating semiconductor integrated circuit | Electricity | 6 | Expired |
| US7525829B2 | Semiconductor storage device | Physics | 6 | Active |
| US5937290A | Method of manufacturing semiconductor integrated circuit devices using phase shifting mask | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6753219B2 | Method of manufacturing semiconductor integrated circuit devices having a memory device with a reduced bit line stray capacity and such semiconductor integrated circuit devices | Electricity | 4 | Expired |
| US6638811B2 | Method of manufacturing a semiconductor integrated circuit device having a capacitor | Electricity | 4 | Expired |
| US10811365B2 | Semiconductor devices having crack-inhibiting structures | Electricity | 3 | Active |
| US6777279B2 | Semiconductor integrated circuit device and manufacturing method thereof | Electricity | 3 | Expired |
| US8093130B2 | Method of manufacturing a semiconductor device having raised source and drain of differing heights | Electricity | 3 | Active |
| US6023084A | Semiconductor integrated circuit device including a memory device having memory cells with increased information storage capacitance and method of manufacturing same | Electricity | 3 | Expired |
| US6492730B1 | Method for fabricating semiconductor integrated circuit | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.