Semiconductor device having aerial wiring and manufacturing method thereof
US7795733B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2006 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Sep 20, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first aerial wiring including a first wiring layer which is formed in an air gap and contains Cu as a main component and a via layer which is electrically connected to the first wiring layer, is formed in an inter-level insulating film containing a preset constituent element and contains Cu as a main component, and a first porous film formed on the first aerial wiring. The semiconductor device further includes a first barrier film which is formed to cover the surface of the first aerial wiring and contains a compound of the preset constituent element and a preset metal element as a main component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.