Methods for forming single dies with multi-layer interconnect structures and structures formed therefrom
US7795735B2 · kind B2 · utility
23Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2007 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Jan 16, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a single die includes forming at least one first active device over a first substrate and at least one first metallic layer coupled to the first active device. At least one second metallic layer is formed over a second substrate, wherein the second substrate does not include any active device. The at least one first metallic layer is bonded with the at least one second metallic layer such that the first substrate and the second substrate constitute a single die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.