Programmable magnetic read only memory (MROM)
US7796421B2 · kind B2 · utility
4Cited by
1References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 8, 2008 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Nov 14, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In one embodiment, there is provided a method for programming a memory device having magnetoresistive memory elements as storage elements. The method is performed during fabrication of the memory device and may be used to realize a Magnetic Read Only Memory (MROM) device. In accordance with the method, during fabrication of a memory device comprising a plurality of magnetoresistive memory elements (MRME) e.g. a MTJs, the memory device is programmed by selectively controlling the presence or absence of the magnetoresistive element at each intersection of a word line (WL) and a bit line (BL) in the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.