Krishnakumar Mani
48Patents
5h-index
8Co-inventors
58Inventor score
Filing activity: Nov 10, 2004 → Jun 17, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8369135B1 | Memory circuit with crossover zones of reduced line width conductors | Electricity | 18 | Active |
| US7394683B2 | Solid state magnetic memory system and method | Physics | 6 | Expired |
| US7830704B1 | Compact magnetic random access memory cell with slotted bit line and method of manufacturing same | Physics | 5 | Active |
| US8900883B1 | Methods for manufacturing carbon ribbons for magnetic devices | Electricity | 5 | Active |
| US7649765B2 | Magnetic memory cell and method of fabricating same | Physics | 5 | Active |
| US7796421B2 | Programmable magnetic read only memory (MROM) | Physics | 4 | Active |
| US8526221B2 | Semiconductor integrated circuit for low and high voltage operations | Physics | 4 | Active |
| US7787289B2 | MRAM design with local write conductors of reduced cross-sectional area | Emerging Cross-Sectional Technologies | 4 | Active |
| US7944737B2 | Magnetic memory cell based on a magnetic tunnel junction (MTJ) with independent storage and read layers | Electricity | 4 | Active |
| US8400866B2 | Voltage boosting in MRAM current drivers | Physics | 3 | Active |
| US7894252B2 | Magnetic memory cell and method of fabricating same | Physics | 3 | Active |
| US8767435B1 | Field programming method for magnetic memory devices | Physics | 3 | Active |
| US8320175B2 | Magnetic booster for magnetic random access memory | Physics | 3 | Active |
| US8625340B1 | Magnetic sidewalls for write lines in field-induced MRAM and methods of manufacturing them | Electricity | 3 | Active |
| US8879314B2 | Memory cell with Schottky diode | Electricity | 3 | Active |
| US8879306B2 | Magnetic memory circuit with stress inducing layer | Electricity | 2 | Active |
| US8711612B1 | Memory circuit and method of forming the same using reduced mask steps | Electricity | 2 | Active |
| US8565012B1 | Magnetic enhancement layer in memory cell | Electricity | 1 | Active |
| US8913424B2 | Magnetic enhancement layer in memory cell | Electricity | 1 | Active |
| US9054292B2 | Memory circuit and method of forming the same using reduced mask steps | Electricity | 1 | Active |
| US9620411B2 | Magnetic sidewalls for write lines in field-induced MRAM and methods of manufacturing them | Electricity | 1 | Active |
| US9713203B2 | Tool for annealing of magnetic stacks | Electricity | 1 | Active |
| US8835101B1 | Method for fabricating a circuit | Electricity | 1 | Active |
| US8730719B1 | MRAM with metal gate write conductors | Electricity | 1 | Active |
| US9299744B2 | Magnetic sidewalls for write lines in field-induced MRAM and methods of manufacturing them | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.