Nonvolatile semiconductor memory device and method of erasing and programming the same
US7796442B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2008 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | Aug 26, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A nonvolatile semiconductor memory device includes a semiconductor substrate having a source, a drain, and a channel region between the source and the drain. The channel region has a first end portion near the drain, a second end portion near the source, and a middle portion between the first and second end portions. The first and second end portions having approximately same width. The memory device is electrically erased by using a hot carrier generated in the first end portion due to avalanche breakdown. The channel region includes a first channel extending from the drain and a second channel adjacent to the first channel. An impurity concentration of the second channel is higher than that of the first channel. An interface between the first and second channels is located in the middle portion between the first and second end portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.