Patent · US Active

Patterned atomic layer epitaxy

US7799132B2 · kind B2 · utility

0Cited by
112References
31Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 13, 2007
Grant dateSep 21, 2010
Priority date
Expiry dateJul 2, 2028

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC30B25/04
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A patterned layer is formed by removing nanoscale passivating particle from a first plurality of nanoscale structural particles or by adding nanoscale passivating particles to the first plurality of nanoscale structural particles. Each of a second plurality of nanoscale structural particles is deposited on each of corresponding ones of the first plurality of nanoscale structural particles that is not passivated by one of the plurality of nanoscale passivating particles.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.