Method of forming an isolation structure by performing multiple high-density plasma depositions
US7799632B2 · kind B2 · utility
1Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2007 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Jun 11, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One embodiment of the present invention relates to a method of forming an isolation structure. During this method, an isolation trench is formed within a semiconductor body. After this trench is formed, it is filled by performing multiple high-frequency plasma depositions to deposit multiple dielectric layers over the semiconductor body. A first of the multiple layers is deposited at a high-frequency power of between approximately 100 watts and approximately 900 watts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.