Method for selective epitaxial growth of source/drain areas

US7799664B2 · kind B2 · utility

Assignee

• IMEC · BE

Inventors

• Peter Verheyen · Nijlen, BE
• Rita Rooyackers · Kessel-Lo, BE
• Denis Shamiryan · Heverlee, BE

Key dates

• Filing date: Dec 22, 2006
• Grant date: Sep 21, 2010
• Expiry date: Aug 23, 2028

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/924

Abstract

One inventive aspect relates to a method of selective epitaxial growth of source/drain (S/D) areas. The method includes providing a substrate having a first and a second substrate area, the first area including at least one gate stack. The method includes applying a poly-Si or poly-SiGe top layer on the substrate, the top layer being etchable with the same etch chemistry as the substrate. The method includes removing the poly-Si or poly-SiGe top layer from the first area selectively towards the poly-Si or poly-SiGe top layer in the second area. The method includes removing simultaneously the poly-Si or poly-SiGe top layer on the second area and at least a part of the substrate in the S/D areas of the first area selectively to the gate stack. The method includes performing a selective epitaxial growth of S/D areas in the first area.