Denis Shamiryan
7Patents
3h-index
11Co-inventors
46Inventor score
Filing activity: Jul 9, 2001 → Sep 5, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6662631B2 | Method and apparatus for characterization of porous films | Physics | 25 | Expired |
| US6593251B2 | Method to produce a porous oxygen-silicon layer | Electricity | 14 | Expired |
| US7521369B2 | Selective removal of rare earth based high-k materials in a semiconductor device | Electricity | 4 | Active |
| US7598184B2 | Plasma composition for selective high-k etch | Electricity | 1 | Active |
| US7964039B2 | Cleaning of plasma chamber walls using noble gas cleaning step | Performing Operations; Transporting | 1 | Active |
| US7390708B2 | Patterning of doped poly-silicon gates | Electricity | 0 | Active |
| US7799664B2 | Method for selective epitaxial growth of source/drain areas | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.