Method of manufacturing a contact structure to avoid open issue
US7799676B2 · kind B2 · utility
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2References
5Claims
0Family size
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Key dates
| Filing date | Apr 17, 2007 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Jun 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a contact structure to avoid open issue is provided. The method includes the steps of providing a substrate with a contact region, forming an insulating layer to cover the substrate, forming a contact hole in the insulating layer to expose the contact region, conformally depositing a titanium layer on the insulating layer, conformally depositing a titanium nitride layer on the titanium layer, and performing a plasma process on the titanium nitride layer to remove the impurities in the titanium nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.