Patent · US Expired

System and method for anisotropically etching a recess in a silicon substrate

US7799691B2 · kind B2 · utility

0Cited by

7References

37Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thorsten Hanewald · Bad Dürkheim, DE
Andreas Hauser · Bern, CH
Ingold Janssen · Birkenfeld, DE
Kai-Olaf Subke · Grafing, DE

Key dates

Filing date	Jan 10, 2006
Grant date	Sep 21, 2010
Priority date	—
Expiry date	May 16, 2026

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/3347
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A method and apparatus for anisotropically etching a recess in a silicon substrate is disclosed. Generally, a plasma is used for energetic excitation of a reactive etching gas, wherein the reactive etching gas is a constituent of a continuous gas flow. A recess is anisotropically etched in a silicon substrate using the reactive etching gas, during which time the recess id deepened by at least fifty micrometers without interrupting the gas flow of the reactive etching gas.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.