High electron mobility transistor semiconductor device having field mitigating plate and fabrication method thereof

US7800132B2 · kind B2 · utility

Assignee

• NORTHROP GRUMMAN SYSTEMS CORPORATION · US

Inventors

• Ioulia Smorchkova · Lakewood, US
• Carol Namba · Walnut, US
• Po-Hsin Liu · Anaheim, US
• Robert Coffie · Camarillo, US
• Roger Tsai · Torrance, US

Key dates

• Filing date: Oct 25, 2007
• Grant date: Sep 21, 2010
• Expiry date: Feb 16, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A semiconductor device includes a T-gate disposed between drain and source regions and above a barrier layer to form a Schottky contact to the channel layer. A first inactive field mitigating plate is disposed above a portion of the T-gate and a second active field plate is disposed above the barrier layer and in a vicinity of the T-gate.