Backside illuminated image sensor having deep light reflective trenches
US7800192B2 · kind B2 · utility
92Cited by
1References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2008 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Oct 18, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/199
Abstract
An array of pixels is formed using a substrate having a frontside and a backside that is for receiving incident light. Each pixel typically includes metallization layers included in the frontside of the substrate, a photosensitive region formed in the backside of the substrate, and a trench formed around the photosensitive region in the backside of the substrate. The trench causes the incident light to be directed away from the trench and towards the photosensitive region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.