Patent · US Active

Process for manufacturing deep through vias in a semiconductor device, and semiconductor device made thereby

US7800234B2 · kind B2 · utility

3Cited by

3References

37Claims

0Family size

Assignee

STMicroelectronics SA

Inventors

Mauro Marchi · Bettolle, IT
Marco Ferrera · Vimercate, IT
Caterina Riva · Cusago, IT

Key dates

Filing date	Nov 16, 2006
Grant date	Sep 21, 2010
Priority date	—
Expiry date	Sep 20, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A process for manufacturing a through via in a semiconductor device includes the steps of: forming a body having a structural layer, a substrate, and a dielectric layer set between the structural layer and the substrate; insulating a portion of the structural layer to form a front-side interconnection region; insulating a portion of the substrate to form a back-side interconnection region; and connecting the front-side interconnection region and the back-side interconnection region through the dielectric layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.