Magnetic sensing device including a sense enhancing layer
US7800868B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2005 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Jul 21, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1121
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic sensor includes a sensor stack having a first magnetic portion, a second magnetic portion, and a barrier layer between the first magnetic portion and the second magnetic portion. At least one of the first magnetic portion and the second magnetic portion includes a multilayer structure having a first magnetic layer having a positive magnetostriction adjacent to the barrier layer, a second magnetic layer, and an intermediate layer between the first magnetic layer and the second magnetic layer. The magnetic sensor has an MR ratio of at least about 80% when the magnetic sensor has a resistance-area (RA) product of about 1.0 Ω·μm2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.