Programming methods to increase window for reverse write 3D cell
US7800934B2 · kind B2 · utility
11Cited by
46References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2007 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Jun 25, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/33
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of operating a nonvolatile memory cell includes providing the nonvolatile memory cell comprising a diode which is fabricated in a first resistivity, unprogrammed state, and applying a forward bias to the diode having a magnitude greater than a minimum voltage required for programming the diode to switch the diode to a second resistivity, programmed state. The second resistivity state is lower than the first resistivity state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.