Oscillating current assisted spin torque magnetic memory
US7800938B2 · kind B2 · utility
20Cited by
6References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2008 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Jan 14, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory unit having a spin torque memory cell with a ferromagnetic free layer, a ferromagnetic pinned layer and a spacer layer therebetween, with the free layer having a switchable magnetization orientation with a switching threshold. A DC current source is electrically connected to the spin torque memory cell to cause spin transfer torque in the free layer. An AC current source is electrically connected to the spin torque memory cell to produce an oscillatory polarized current capable of spin transfer torque via resonant coupling with the free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.