Method of fabricating Ge or SiGe/Si waveguide or photonic crystal structures by selective growth
US7801406B2 · kind B2 · utility
18Cited by
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20Claims
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Key dates
| Filing date | Aug 1, 2005 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Aug 1, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12169
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming a low loss crystal quality waveguide is provided. The method includes providing a substrate and forming a dielectric layer on the substrate. A channel is formed by etching a portion of the dielectric layer. A selective growth of a Si Ge, or SiGe layer is performed in the area that defines the channel. Furthermore, the method includes thermally annealing the waveguide at a defined temperature range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.