State change sensing
US7802114B2 · kind B2 · utility
0Cited by
14References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 16, 2007 |
| Grant date | Sep 21, 2010 |
| Priority date | — |
| Expiry date | Feb 4, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F1/28
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Application of too much voltage to a memory cell will cause damage to the cell or even destroy the cell. Tracking current that arises from an application of voltage upon a memory cell allows for minimization of damage upon the memory cell. If there is a change in current, then the voltage application can be accordingly changed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.