Patent · US Active

Semiconductor substrate and process for producing it

US7803695B2 · kind B2 · utility

1Cited by

2References

9Claims

0Family size

Assignee

Siltronic AG · DE

Inventors

Dirk Dantz · Königslutter am Elm, DE
Andreas Huber · Holzgerlingen, DE
Reinhold Wahlich · Burghausen, DE
Brian Murphy · Pfarrkirchen, DE

Key dates

Filing date	Nov 13, 2008
Grant date	Sep 28, 2010
Priority date	—
Expiry date	Dec 5, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/324
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A process for producing a semiconductor substrate comprising a carrier wafer and a layer of single-crystalline semiconductor material:a) producing a layer containing recesses at the surface of a donor wafer of single-crystalline semiconductor material,b) joining the surface of the donor wafer containing recesses to the carrier wafer,c) heat treating to close the recesses at the interface between the carrier wafer and the donor wafer to form a layer of cavities within the donor wafer, andd) splitting the donor wafer along the layer of cavities, resulting in a layer of semiconductor material on the carrier wafer. Semiconductor substrates prepared thusly may have a single-crystalline semiconductor layer having a thickness of 100 nm or less, a layer thickness uniformity of 5% or less, and an HF defect density of 0.02/cm2 or less.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.