Metal-germanium physical vapor deposition for semiconductor device defect reduction
US7803703B2 · kind B2 · utility
2Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2008 |
| Grant date | Sep 28, 2010 |
| Priority date | — |
| Expiry date | Aug 4, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of manufacturing a metal silicide electrode (100) for a semiconductor device (110). The method comprises depositing by physical vapor deposition, germanium atoms (120) and transition metal atoms (130) to form a metal-germanium alloy layer (140) on a semiconductor substrate (150). The metal-germanium alloy layer and the semiconductor substrate are reacted to form a metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit (400).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.