Patent · US Active

Lithographic patterning for sub-90nm with a multi-layered carbon-based hardmask

US7803715B1 · kind B1 · utility

28Cited by

8References

20Claims

0Family size

Inventors

Shai Haimson · Kiryat Gat, IL
Gabe Schwartz · Kiryat Gat, IL
Michael Shifrin · Ashkelon, IL

Key dates

Filing date	Dec 29, 2008
Grant date	Sep 28, 2010
Priority date	—
Expiry date	Dec 29, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02274
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Multi-layered carbon-based hardmask and method to form the same. The multi-layered carbon-based hardmask includes at least top and bottom carbon-based hardmask layers having different refractive indexes. The top and bottom carbon-based hardmask layer thicknesses and refractive indexes are tuned so that the top carbon-based hardmask layer serves as an anti-reflective coating (ARC) layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.