Semiconductor element structure and method for making the same
US7804141B2 · kind B2 · utility
2Cited by
3References
8Claims
0Family size
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Key dates
| Filing date | Feb 19, 2008 |
| Grant date | Sep 28, 2010 |
| Priority date | — |
| Expiry date | Jan 10, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
Abstract
A semiconductor element structure includes a first MOS having a first high-K material and a first metal for use in a first gate, a second MOS having a second high-K material and a second metal for use in a second gate and a bridge channel disposed in a recess connecting the first gate and the second gate for electrically connecting the first gate and the second gate, wherein the bridge channel is embedded in at least one of the first gate and the second gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.