Diode assisted switching spin-transfer torque memory unit
US7804709B2 · kind B2 · utility
20Cited by
17References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2008 |
| Grant date | Sep 28, 2010 |
| Priority date | — |
| Expiry date | Dec 5, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1659
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.