Processing method
US7807065B2 · kind B2 · utility
5Cited by
4References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2006 |
| Grant date | Oct 5, 2010 |
| Priority date | — |
| Expiry date | Jan 27, 2029 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A processing method for forming a first pattern on a substrate to which a resist is applied includes the steps of pressing an original having a second pattern that has a relief reverse to that of the first pattern, against the resist on the substrate, and irradiating light onto the resist via the original, wherein a size of a concave of the second pattern is greater than a size of a convex of the first pattern corresponding to the concave of the second pattern, and a size of a convex of the second pattern is smaller than a size of a concave of the first pattern corresponding to the convex of the second pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.