Patent · US Active

EDA methodology for extending ghost feature beyond notched active to improve adjacent gate CD control using a two-print-two-etch approach

US7807343B2 · kind B2 · utility

2Cited by
3References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 10, 2007
Grant dateOct 5, 2010
Priority date—
Expiry dateAug 26, 2028

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F1/70
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

In accordance with various embodiments, semiconductor devices and methods of forming semiconductor devices having non-rectangular active regions are provided. An exemplary method includes using a first mask to form a plurality of first features over a non-rectangular shaped active region and at least one ghost feature, wherein the plurality of first features extend beyond an edge of the non-rectangular shaped active region. The method further includes using a second mask to remove a portion of the plurality of first features extending beyond the edge of the non-rectangular shaped active region and the at least one ghost feature.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.