Benjamen M. Rathsack
35Patents
9h-index
29Co-inventors
71Inventor score
Filing activity: Apr 21, 2005 → Jul 9, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9613801B2 | Integration of absorption based heating bake methods into a photolithography track system | Electricity | 448 | Active |
| US9136110B2 | Multi-step bake apparatus and method for directed self-assembly lithography control | Electricity | 61 | Active |
| US8108805B2 | Simplified micro-bridging and roughness analysis | Electricity | 30 | Active |
| US7673278B2 | Enhanced process yield using a hot-spot library | Electricity | 22 | Active |
| US9349604B2 | Use of topography to direct assembly of block copolymers in grapho-epitaxial applications | Electricity | 14 | Active |
| US8288174B1 | Electrostatic post exposure bake apparatus and method | Electricity | 12 | Active |
| US9618848B2 | Methods and techniques to use with photosensitized chemically amplified resist chemicals and processes | Electricity | 11 | Active |
| US9519227B2 | Metrology for measurement of photosensitizer concentration within photo-sensitized chemically-amplified resist (PS-CAR) | Physics | 10 | Active |
| US9418860B2 | Use of topography to direct assembly of block copolymers in grapho-epitaxial applications | Electricity | 10 | Active |
| US9005877B2 | Method of forming patterns using block copolymers and articles thereof | Emerging Cross-Sectional Technologies | 9 | Active |
| US9412611B2 | Use of grapho-epitaxial directed self-assembly to precisely cut lines | Electricity | 8 | Active |
| US10020195B2 | Chemical amplification methods and techniques for developable bottom anti-reflective coatings and dyed implant resists | Electricity | 7 | Active |
| US8795952B2 | Line pattern collapse mitigation through gap-fill material application | Physics | 6 | Active |
| US9735026B2 | Controlling cleaning of a layer on a substrate using nozzles | Electricity | 5 | Active |
| US7930656B2 | System and method for making photomasks | Physics | 4 | Active |
| US8176443B2 | Layout of printable assist features to aid transistor control | Physics | 4 | Active |
| US8318607B2 | Immersion lithography wafer edge bead removal for wafer and scanner defect prevention | Electricity | 4 | Active |
| US7737016B2 | Two-print two-etch method for enhancement of CD control using ghost poly | Physics | 4 | Active |
| US9454081B2 | Line pattern collapse mitigation through gap-fill material application | Physics | 3 | Active |
| US9281251B2 | Substrate backside texturing | Electricity | 2 | Active |
| US9209014B2 | Multi-step bake apparatus and method for directed self-assembly lithography control | Electricity | 2 | Active |
| US9147574B2 | Topography minimization of neutral layer overcoats in directed self-assembly applications | Electricity | 2 | Active |
| US10622267B2 | Facilitation of spin-coat planarization over feature topography during substrate fabrication | Electricity | 2 | Active |
| US10429745B2 | Photo-sensitized chemically amplified resist (PS-CAR) simulation | Physics | 2 | Active |
| US7807343B2 | EDA methodology for extending ghost feature beyond notched active to improve adjacent gate CD control using a two-print-two-etch approach | Physics | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.