Patent · US Active

Substrate heating apparatus and semiconductor fabrication method

US7807553B2 · kind B2 · utility

3Cited by
4References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 6, 2007
Grant dateOct 5, 2010
Priority date
Expiry dateJan 21, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/157
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A substrate heating apparatus having a heating unit for heating a substrate placed in a process chamber which can be evacuated includes a suscepter which is installed between the heating unit and a substrate, and on which the substrate is mounted, and a heat receiving member which is installed to oppose the suscepter with the substrate being sandwiched between them, and receives heat from the heating unit via the suscepter. A ventilating portion which allows a space formed between the heat receiving member and substrate to communicate with a space in the process chamber is formed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.