Laser assisted chemical vapor deposition for backside die marking and structures formed thereby
US7807573B2 · kind B2 · utility
6Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2008 |
| Grant date | Oct 5, 2010 |
| Priority date | — |
| Expiry date | Sep 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of forming a microelectronic structure are described. Embodiments of those methods include forming an identification mark on a portion of a backside of an individual die of a wafer by utilizing laser assisted CVD, wherein the formation of the identification mark is localized to a focal spot of the laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.