Frequency doubling using spacer mask
US7807578B2 · kind B2 · utility
750Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2007 |
| Grant date | Oct 5, 2010 |
| Priority date | — |
| Expiry date | Mar 6, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor mask is described. A semiconductor stack having a sacrificial mask and a spacer mask is first provided. The sacrificial mask is comprised of a series of lines and the spacer mask has spacer lines adjacent to the sidewalls of the series of lines. Next, the spacer mask is cropped. Finally, the sacrificial mask is removed to provide a cropped spacer mask. The cropped spacer mask doubles the frequency of the series of lines of the sacrificial mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.