Triple poly-si replacement scheme for memory devices
US7807580B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2007 |
| Grant date | Oct 5, 2010 |
| Priority date | — |
| Expiry date | Jun 22, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
A method of replacing a top oxide around a storage element of a memory device is provided. The method can involve removing a core first poly and core first top oxide in a core region while not removing a periphery first poly in a periphery region on a semiconductor substrate; forming a second top oxide around a storage element in the core region and on the periphery first poly in the periphery region; forming a second poly over the semiconductor substrate in both the core and periphery regions; removing the second poly and second top oxide in the periphery region; and forming a third poly on the semiconductor substrate in both the core and periphery regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.