Techniques for ion implantation of molecular ions
US7807961B2 · kind B2 · utility
2Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2008 |
| Grant date | Oct 5, 2010 |
| Priority date | — |
| Expiry date | Feb 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques for ion implantation of molecular ions are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion implanter for implanting a target material with a molecular ion at a predetermined temperature to improve at least one of strain and amorphization of the target material, wherein the molecular ion is generated in-situ within an ion source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.