Phase-change memory using single element semimetallic layer
US7807989B2 · kind B2 · utility
5Cited by
2References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 17, 2008 |
| Grant date | Oct 5, 2010 |
| Priority date | — |
| Expiry date | Oct 14, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
Abstract
Provided is a phase-change memory using a single-element semimetallic thin film. The device includes a storage node having a phase-change material layer and a switching element connected to the storage node, wherein the storage node includes a single-element semimetallic thin film which is formed between an upper electrode and a lower electrode. Thus, the write speed of the phase-change memory can be increased compared with the case of a Ge—Sb—Te (GST) based material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.