Silicon carbide semiconductor device

US7808003B2 · kind B2 · utility

Assignee

• DENSO CORPORATION · JP

Inventors

• Takeshi Endo · Kariya, JP
• Eiichi Okuno · Mizuho, JP

Key dates

• Filing date: Oct 2, 2008
• Grant date: Oct 5, 2010
• Expiry date: Apr 7, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/62

Abstract

A silicon carbide semiconductor device is disclosed. The silicon carbide semiconductor device includes a substrate; a drift layer having a first conductivity type and located on a first surface of the substrate; and a vertical type semiconductor element. The vertical type semiconductor element includes: an impurity layer having a second conductivity type, and located in a surface portion of the drift layer; and a first conductivity type region located in the drift layer, spaced away from the impurity layer, located closer to the substrate than the impurity layer, and having an impurity concentration higher than the drift layer.