Non-volatile memory cell with fully isolated substrate as charge storage
US7808034B1 · kind B1 · utility
0Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2007 |
| Grant date | Oct 5, 2010 |
| Priority date | — |
| Expiry date | Jan 12, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/60
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a non-volatile memory cell, charge is stored in a fully isolated substrate or floating bulk that forms a storage capacitor with a first poly strip and includes a second poly strip defining a control gate and a third poly strip coupled to a read transistor gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.