Semiconductor package including through-hole electrode and light-transmitting substrate
US7808064B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2009 |
| Grant date | Oct 5, 2010 |
| Priority date | — |
| Expiry date | Jul 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/13024
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An imaging element is formed on the first main surface of a semiconductor substrate. An external terminal is formed on the second main surface of the semiconductor substrate. A through-hole electrode is formed in a through hole formed in the semiconductor substrate. A first electrode pad is formed on the through-hole electrode in the first main surface. An interlayer insulating film is formed on the first electrode pad and on the first main surface. A second electrode pad is formed on the interlayer insulating film. A passivation film is formed on the second electrode pad and the interlayer insulating film, and has an opening which exposes a portion of the second electrode pad. A contact plug is formed between the first and second electrode pads in a region which does not overlap the opening when viewed in a direction perpendicular to the surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.